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| Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. N - CDMA Application * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 895 MHz or 921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 40% (Typ) Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 19 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power, @ f = 880 MHz * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * N Suffix Indicates Lead - Free Terminations * 200C Capable Plastic Package * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1(MR1) CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1(MBR1) Value - 0.5, +68 - 0.5, +12 398 2.3 - 65 to +150 200 Unit Vdc Vdc W W/C C C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 125 W CW Case Temperature 76C, 27 W CW Symbol RJC Value(1,2) 0.44 0.45 Unit C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) C (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 8 Adc) Dynamic Characteristics (3) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss Crss -- -- 60 2 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 1 2 0.05 -- 2.1 2.89 0.23 6 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W, f = 880 MHz Power Gain Gps 19 20.2 Drain Efficiency Adjacent Channel Power Ratio Input Return Loss D ACPR IRL 29 -- -- 31 - 47.1 - 16 24 -- - 45 -9 dB % dBc dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. (continued) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 60 W Avg., 921 MHz R1 VBIAS + C10 RF INPUT C9 + C8 + C7 R2 C6 L1 Z1 C1 C2 C3 C5 Z2 Z3 Z4 Z5 Z6 Z7 C4 Z8 C11 DUT C12 C13 C14 Z9 Z10 L2 Z11 Z12 Z13 Z14 C18 C19 + C20 + C21 + C22 VSUPPLY C23 Z15 Z16 RF Z17 OUTPUT C17 C15 C16 Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.200 1.060 0.382 0.108 0.200 0.028 0.236 0.050 0.238 x 0.080 x 0.080 x 0.220 x 0.220 x 0.420 x 0.620 x 0.620 x 0.620 x 0.620 Microstrip Microstrip Microstrip Microstrip x 0.620 Taper Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.057 x 0.620 Microstrip 0.119 x 0.620 Microstrip 0.450 x 0.220 Microstrip 0.061 x 0.220 Microstrip 0.078 x 0.220 Microstrip 0.692 x 0.080 Microstrip 0.368 x 0.080 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55 Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values Part C1 C2 C3, C15 C4, C5 C6, C18, C19 C7, C8 C9, C23 C10 C11, C12 C13, C14 C16 C17 C20, C21 C22 L1 L2 R1 R2 Description 20 pF Chip Capacitor 6.2 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitors, Gigatrim 11 pF Chip Capacitors 0.56 F, 50 V Chip Capacitors 47 F, 16 V Tantalum Capacitors 47 pF Chip Capacitors 100 F, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 5.1 pF Chip Capacitors 0.3 pF Chip Capacitor 39 pF Chip Capacitor 22 F, 35 V Tantalum Capacitors 470 F, 63 V Electrolytic Capacitor 7.15 nH Inductor 8.0 nH Inductor 15 , 1/4 W Chip Resistor (1210) 560 k, 1/8 W Resistor (1206) Part Number 600B200FT250XT 600B6R2BT250XT 27291SL 600B110FT250XT C1825C564J5RAC 593D476X9016D2T 700B470FW500XT 515D107M050BB6A 600B120FT250XT 600B5R1BT250XT 700B0R3BW500XT 700B390FW500XT T491X226K035AS SME63V471M12X25LL 1606 - 7J A03T ATC ATC Johanson ATC Kemet Vishay ATC Vishay ATC ATC ATC ATC Kemet United Chemi - Con CoilCraft CoilCraft Dale/Vishay Dale/Vishay Manufacturer MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 4 RF Device Data Freescale Semiconductor C8 C7 C9 VGG C10 C1 CUT OUT AREA L1 C2 C5 C3 C6 C19 C20 C21 C22 R2 R1 VDD C18 C14 L2 C23 C17 C4 C11 C13 C12 C15 C16 900 MHz TO272 WB Rev. 0 Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 20.5 20.3 Gps, POWER GAIN (dB) 20 19.8 19.5 19.3 19 18.8 ALT1 18.5 850 860 870 880 890 900 f, FREQUENCY (MHz) -70 910 D VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 IRL ACPR Gps 34 32 30 28 -30 -40 -50 -60 Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. 19.6 19.4 Gps, POWER GAIN (dB) 19.2 19 18.8 18.6 18.4 18.2 18 850 D Gps 52 48 44 -30 ACPR -40 -50 ALT1 -60 -70 910 IRL 860 870 880 890 900 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg. 22 21 Gps, POWER GAIN (dB) 1187 mA 20 19 18 17 16 1 950 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1475 mA -10 VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements, 100 MHz Tone Spacing IDQ = 1425 mA 475 mA -40 712 mA -20 -30 712 mA 475 mA -50 1187 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 950 mA 100 300 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements, 100 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 40 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 5th Order -60 7th Order -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 3rd Order VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements, Center Frequency = 880 MHz -10 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two -Tone Measurements Center Frequency = 880 MHz 3rd Order 5th Order -40 -20 -30 -50 7th Order -60 0.1 1 10 100 TWO -TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 28 29 30 31 32 33 P1dB = 51.5 dBm (139.3 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing P3dB = 52.4 dBm (172.5 W) Ideal Actual VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 880 MHz 34 35 36 Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N-CDMA IS-95 (Pilot 40 Sync, Paging, Traffic Codes 8 Through 13) 30 Gps 25_C 10 0 0.1 1 25_C 85_C 10 100 -30_C TC = -30_C 25_C D 85_C -30_C 25_C 85_C ACPR -70 -80 200 -50 ALT1 -40 -30 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) 20 -60 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 21 Gps, POWER GAIN (dB) 20 19 18 17 25_C 16 15 1 10 Pout, OUTPUT POWER (WATTS) CW 100 85_C VDD = 28 Vdc IDQ = 950 mA f = 880 MHz Gps TC = -30_C -30_C 70 60 D, DRAIN EFFICIENCY (%) 21 20 Gps, POWER GAIN (dB) 25_C 85_C D 50 40 30 20 10 0 200 19 32 V 28 V 24 V 17 16 V 16 0 VDD = 12 V 50 100 150 20 V IDQ = 950 mA f = 880 MHz 200 250 18 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 109 MTTF FACTOR (HOURS X AMPS2) Figure 12. Power Gain versus Output Power 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2 -1.5 1.2288 MHz Channel BW -ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW Figure 14. Single - Carrier CCDF N - CDMA -0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 9 f = 900 MHz Zload f = 860 MHz Zo = 5 f = 900 MHz Zsource f = 860 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz 860 865 870 875 880 885 890 895 900 Zsource 0.62 - j2.13 0.64 - j2.31 0.62 - j2.45 0.59 - j2.43 0.57 - j2.42 0.54 - j2.36 0.57 - j2.18 0.58 - j1.94 0.59 - j1.86 Zload 1.48 - j0.14 1.56 - j0.09 1.66 - j0.02 1.73 + j0.04 1.74 + j0.11 1.68 + j0.19 1.61 + j0.25 1.52 + j0.33 1.48 + j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 11 NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 12 RF Device Data Freescale Semiconductor NOTES MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 14 RF Device Data Freescale Semiconductor CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC E5 BOTTOM VIEW 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S9125NR1(MR1) STYLE 1: PIN 1. 2. 3. 4. 5. r1 aaa M C A B 2X E1 B A E2 PIN 5 GATE LEAD DRAIN LEAD 3 D1 4X D D2 e 4 4X b1 aaa M C A E c1 H A1 A2 7 Y DATUM PLANE ZONE J F A E3 Y C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 E E1 E2 E3 F b1 c1 r1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .600 --- .551 .559 .353 .357 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .063 .068 .106 BSC .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 15.24 --- 14 14.2 8.97 9.07 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 .18 .28 1.60 1.73 2.69 BSC .10 STYLE 1: PIN 1. 2. 3. 4. 5. DRAIN DRAIN GATE GATE SOURCE CASE 1484 - 02 ISSUE B TO - 272 WB - 4 PLASTIC MRF6S9125NBR1(MBR1) MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 RF Device Data Freescale Semiconductor 15 EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE E3 VIEW Y - Y NOTE 8 1 2 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Rev. 16 1, 7/2005 Document Number: MRF6S9125 RF Device Data Freescale Semiconductor |
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